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Research Interests

Materials science and plasma physics.  Electronic materials used in thin film photo voltaic devices; fundamental processes in plasma-enhanced chemical and physical vapor deposition; thin film deposition and characterization; computational plasma physics.  Recent works have focused on fundamental studies of thin film deposition (ZnO:Al and a-SiGe:H) by reactive magnetron sputtering, with an emphasis on synergistic effects of near-substrate plasma and temperature, and Monte Carlo modeling of sputter atom transport.

Teaching Interests

Introductory Physics, Analog Electronics and Instrumentation, Digital Electronics, Classical Mechanics, Electromagnetic Theory, Statistical Mechanics, Semiconductor and Device physics; Recent topics courses include Chemical Physics, Biomechanics, and the Science of Renewable Energy.

Professional Societies

Materials Research Society
American Association of Physics Teachers
American Vacuum Society

External Grants

National Science Foundation Research  in Undergraduate Institution (NSF-RUI) $216,335 (2005-2008) Fundamental Studies of a-Ge;H by Reactive Sputter Deposition

National Science Foundation Research in Undergraduate Institution (NSF-RUI) $222,567 (1999-2002) Fundamental Studies of Zinc Oxide Deposition by Reactive Sputter Deposition

NSF Instrumentation and Laboratory Improvement (with J. Heyman) Grant $50,300 (1998-2000) Microelectronics in the Undergraduate Physics Laboratory

NSF Instrumentation with K. Wirth and T. Varberg) Grant $22,538 (1995-1997) x-ray Diffraction: A Common Interdisciplinary Experience for Geology, Chemistry, and Physics Students

NSF Instrumentation and Laboratory Improvement (ILI) Grant $38,460 (1993-1995) Semiconductor Characterization in Undergraduate Physics

Petroleum Research Fund Type G Grant $20,000 (1993-1995) Mass Spectrometric Studies of Methane Glow Discharge Reaction Kinetics

Peer-Reviewed Publications
(Macalester undergraduate student co-authors denoted by *)

19. J.R. Doyle, Y. Xu. Reedy, H.M. Branz and A.H. Mahan, "Film Stoichiometry and Gas Phase Chemistry in HW-CVD of a-SiGe:H" accepted for publication in Thin Solid Films (2007).

18.  N. W. Schmidt*, T. S. Totushek*, W. A. Kimes*, D. R. Callender*, and J. R. Doyle, "The effects of substrate temperature and near substrate-plasma density on the properties of dc magnetron sputtered aluminum doped zinc oxide, "Journal of applied physics, 94, 5514-552, (2003).

17. K. T. Kuwata, R. I. Erickson*, and J. R. Doyle, "A comparative study of interatomic potentials for copper and aluminum gas phases sputter atom transport simulations, "Nuclear Instruments and Methods in Physics Research B, 201, 566-570, (2003).

16. J.R. Doyle and G.J. Feng "Effects of surface topography on oxide deposition rates using TEOS/O2 chemistry", Journal of Vacuum Science Technology B, 17, 2147-2152 (1999).

15. J. R. Doyle, "Chemical Kinetics in low pressure acetylene rf glow discharges", Journal of Applied Physics vol 82, pp 4763-4771(1997).

14. D.J. Dangle*, C.M. Mallouris* and J.R. Doyle, "Radical and film growth kinetics in methane discharges", Journal of Applied Physics vol 79, pp 8735-8747 (1996).

13. J.R. Doyle, A. Nurrudin, and J.R. Abelson, "Effect of anode bias on plasma confinement in dc magnetron discharges", Journal of Vacuum Science and Technology, vol. A12, pp886-888 (1994).

12. A. Nurrudin, J.R. Doyle, and J.R. Abelson, "Macro-trench studies of the surface reaction probability in a-Si:H deposition", Journal of Applied Physics vol. 76, pp. 1856-1870 (1994).

11. J.R. Abelson, L.M. Mandrell and J.R. Doyle. "Hydrogen release kinetics from the a-Si:H surface during reactive magnetron sputter deposition", Journal of Applied Physics vol. 76, pp. 1856-1870 (1994).

10. A.M. Myers, J.R. Doyle, and D.N. Ruzic, "Monte Carlo simulations of sputter atom transport in low pressure sputtering: the effects of interaction potential, sputter distribution, and system geometry", J. Appl. Phys. 72, 3064 (1992).

9. J.R. Doyle, D.A. Doughty, and A. Gallagher, "Plasma Chemistry in Disilane Discharges", J. Appl. Phys. 71, 4771 (1992).

8. J.R. Doyle, D.A. Doughty, and A. Gallagher, "Plasma chemistry in silane/germane and silane/germane mixtures", J. Appl. Phys. 71, 4727 (1992).

7. J.R. Doyle, D.A. Doughty, and A. Gallagher, "Germane Discharge Chemistry", J. Appl. Phys. 69, 4169 (1991).

6. A.M. Myers, J.R. Doyle, J.R. Abelson, and D.N. Ruzic, "Monte Carlo simulations of magnetron sputtering particle transport", J. Vac. Sci. Technol. A9, 612 (1991).

5. J.R. Doyle, D.A. Doughty, and A. Gallagher, "Silane dissociation products in  deposition discharges", J. Appl. Phys 68, 4375 (1990).

4. D.A. Doughty, J.R. Doyle, G.H. Lin, and A. Gallagher, "Surface reaction probability of film producing radicals in silane glow discharges", J.Appl.Phys 67, 6220 (1990).

3. J.R. Abelson, J.R. Doyle, L. Mandrell, A.M. Myers, and N. Maley, "Surface Hydrogen release during growth of a-Si:H by reactive magnetron sputtering", J. Vac. Sci. Technol. A8, 1364 (1990).

2. J.R. Doyle, R. Roberston, G.H. Lin, M.Z. He, and A. Gallagher, "Production of high quality amorphous silicon films by evaporative silane surface decomposition", J. Appl. Phys. 64, 3215 (1988).

1. G.H. Lin, J.R. Doyle, M. He, and A. Gallagher, "Argon sputtering analysis of the growing surface of hydrogenated amorphous silicon films", J. Appl. Phys. 64, 188 (1988).

Recent Presentations and Conference Proceedings

Kristin Pollock*, Tobin Kaufman-Osborn*, Jonas Hiltrop*, Kyle Braam*, Steven Fazzio*, and James R. Doyle, "Substrate ion flux effects in the reactive magnetron sputtering of hydrogenated amorphous germanium", poster presentation at the Materials Research Society Spring 2007 Meeting, San Francisco.

J.R. Doyle, Y. Xu, R. Reedy, H.M. Branz, and A.H. Mahan, Mahan, "Film Stoichiometry and Gas Phase Chemistry in HW-CVD of a-SiGe:H", Contributed talk to the 4th International Conference on HWCVD Process, October 2006, Takayama, Japan.

J.R. Doyle, Y. Xu, R. Reedy, H.M. Branz, and A.H. Mahan, Mahan, "Film Stoichiometry and Gas Phase Chemistry in HW-CVD of a-SiGe:H", poster presentation at the Materials Research Society Spring 2006 Meeting, San Francisco.

S. Datta, J.D. Cohen, S.L. Golledge, X.Yu, A.H. Mahan, J.R. Doyle, and H.M. Branz, "The Effect of Oxygen Contamination of the Electronic Properties of Hot-Wire CVD Amorphous Silicon Germanium Alloys", Contributed talk (by S. Datta) at Materials Research Society Spring 2006 Meeting, San Francisco.

J.R. Doyle, "Near-substrate plasma effects of the properties of dc magnetron sputtered aluminum doped zinc oxide", poster presentation at the Materials Research Society Spring 2004 Meeting, San Francisco.

J.R. Doyle, F. Mohammed*, A. Pontarelli*, and S. Bokhari, "Photoelectronic Properties of n-ZnO:Al/p-Si Heterojunctions", poster presentation at the American Vacuum Society 50th International Symposium, Baltimore Md, November, 2003.

J.R. Doyle N. Schmidt*, T. Totushek*, W. Kimes*, "The Effects of Substrate Temperature and Ion Flux on the Opto-electronic Properties of dc Magnetron Sputtered Aluminum-doped Zinc Oxide", poster presentation at the American Vacuum Society 49th International Symposium, November, 2002.

J.R. Doyle, D. Cole*, B. Magocsi*, "Deposition kinetics in methane rf glow discharges: a combined experimental modeling study", contributed talk presented at the 45th National Symposium of the American Vacuum Society, Boston, MN, Octrober 2000.

R. Erickson* and J.R. Doyle, "Energy and angular distributions of depositions flux in magnetron sputtering systems", poster presentation at the 45th National Symposium of the American Vacuum Society, Boston, MA, October 2000.

J.R. Doyle, "Plasma chemistry in acetylene rf glow discharges", poster presentation at the 44th National Symposium of the American Vacuum Society, San Jose CA, October 1997.

J. Hart Shafer*, M. Mahala*, D.J. Dagel*, and J.R. Doyle "Ion bombardment effects of dc magnetron sputtered ZnO thin films", poster presentation at the 44th National Symposium of the American Vacuum Society, Jan Jose CA, October 1997.

G.J. Feng and J.R. Doyle, "Effects of surface topography on plasma-enhanced silicon dioxide deposition from TEOS" poster presentation at the 44th National Meeting of the American Vacuum Society San Jose, CA October 1997.

"Fundamental Kinetics in Thin Film Deposition: PACVD of Diamond-like Carbon and Reactive Magnetron Sputter Deposition of ZnO", invited talk given to Thin Film Chapter at 3M Corporate Research, St Paul, August 1997.

"Radical and film growth kinetics in methane discharges", J.R. Doyle, D.J. Dagel*, and C.Z. Mallouris*, contributed talk given at the 43rd National Symposium of the American Vacuum Society, Philadelphia, 1996.

"A Model for Radical Chemistry in Methane Discharges", J.R. Doyle, D.J. Dagel*, and C.Z. Mallouris*, poster presentation at the 46th Gaseous Electronics Conference, Montreal, 1992.

A. Nurruddin, J.R. Doyle, and J.R. Abelson, "Macro-trench studies of surface reaction probability during a-Si:H growth" in Amorphous Silicon Technology 1992 ed. M. Thompson et al. (Mat. Res. Soc. Symp. Proc. Vol. 258), p. 33.

J.R. Doyle, N. Maley, J.R. Abelson, "Light induced changes in photo carrier transport in magnetron sputtered a-Si:H", in Amorphous silicon Materials and Solar Cells" AIP Conference Proceedings 234 (Denver, CO 1991), pp. 248-255.

J.R. Doyle, N. Maley, and J.R. Abelson, "Schotty barriers on magnetron sputtered a-Si:H: depletion width effects on photo carrier collection vs bandgap and light soaking", in "Amorphous Silicon Technology 1991" ed. A. Madan et al. (Mat. Res. Soc. Symp. Proc. Vol. 219), p111.

A.M. Myers, J.R. Doyle, G.J. Feng, N. Maley, D.L. Ruzic, and  J.R. Abelson, "Energetic Particle Fluxes in magnetron sputter deposition of a-Si:H, J Non-Crys. Sol. 137&138, 7383 (1991).

J.R. Abelson, N. Maley, J.R. Doyle, G.F. Feng, M. Fitzner, M. Katiyar, L.Mandrell, A.M. Myers, A. Nuruddin, D.N. Ruzic, and S. Yang, "In-situ measurements of hydrogen flux, surface coverage, incorporation and deposition during magnetron sputter deposition of a-Si:H", in Amorphous Silicon Technology 1991 (Mat. Res. Soc. Symp. Proc. Vol. 219), P. 619.

A.M. Myers, D.N. Ruzuc, N. Maley, J. Doyle, and J.R. Abelson, "Energy Resolve Mass Spectrometry of the a-Si:D Growth Species During dc Magnetron Sputtering", in Amorphous Silicon Technology 1990, ed. A Madan et al. (Mat. Res. Soc. Symp. Proc. Vol. 192), p 595.

J.R. Abelson, L. Mandrell, J. Doyle, A.M. Myers, and N. Maley, "Isotopic Hydrogen Exchange Studies of the a-Si:H Surface During Growth", J. Non-Crystallines Solids 114, 118 (1989).

A. Gallagher, J. Doyle, and D. Doughty, "Plasma chemistry in silane and silane-dislane discharge deposition" in Amorphous Silicon Technology 1989 (Mat. Res. Soc. Symp. Proc. Vol. 149), pp. 23-31.

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Recent Presentational and Conference Proceedings

Comments and questions to doyle@macalester.edu