Heyman
Lab:
Lab |
People
|Papers
|Talks
We use ultrafast optical
techniques to investigate carrier transport
and hot-carrier effects in semiconductors and semiconductor quantum
wells. Our principle experimental technique is ultrafast THz
spectroscopy, which lets us
impulsively excite a material with a femtosecond optical pulse or
single-cycle electromagnetic pulse, and record the resulting motion of
charge in time. This allows us to investigate charge transport
and
observe hot-carrier phenomena in semiconductors and semiconductor
heterostructures on time-scales that will be relevant to future
electronic devices.
The Lab
Papers (for complete list go here)
L. Bell*, et. al., "THz emission by Quantum Beating in a Modulation Doped Quantum Well", APL 92, 142108, (2008)
J.N. Heyman, et. al., "Terahertz Photo-Hall Measurements of Carrier Mobility in GaAs and InP, APL 88, 162104, (2006)
J.
N.
Heyman, N. Coates* , A. Reinhardt *, and G. Strasser, "Diffusion and
Drift in Terahertz Emission at GaAs Surfaces". Applied Physics
Letters 83 (2003): 5476.
J.
N. Heyman, P. Neocleous*, D. Hebert*, P.A. Crowell, T. Müller,
K. Unterrainer, “Terahertz emission from GaAs and InAs in a Magnetic
Field” Physical Review B64, (2001) 085202.
J.
N.
Heyman, R. Kersting, K. Unterrainer. “Time-Domain Measurement of
Intersubband Oscillations in a Quantum Well” Applied Physics Letters 72
(Feb. 1998): 644-646.
J. N. Heyman, J. Barnhorst*, K. Unterrainer, J. Williams, K. Campman,
P.F.Hopkins, A.C.Gossard. “Intersubband scattering of cold electrons in
a coupled quantum well with subband spacing below the optical phonon
energy .” Physica E 2 (1998): 195-199.
Talks
"Terahertz
Charge
Oscillations in Semiconductors", Department of Physics, Applied Physics
and Astronomy Colloquium, Rensselaer Polytechnic Institute, Troy, NY,
April 19th, 2004.