Heyman Lab:   Lab   | People   |Papers   |Talks Optics

We  use ultrafast optical techniques to investigate carrier transport and hot-carrier effects in semiconductors and semiconductor quantum wells.  Our principle experimental technique is ultrafast THz spectroscopy, which lets us impulsively excite a material with a femtosecond optical pulse or single-cycle electromagnetic pulse, and record the resulting motion of charge in time.  This allows us to investigate charge transport and observe hot-carrier phenomena in semiconductors and semiconductor heterostructures on time-scales that will be relevant to future electronic devices.

The Lab

       lab floorplan

Papers  (for complete list go here)

L. Bell*, et. al., "THz emission by Quantum Beating in a Modulation Doped Quantum Well", APL 92, 142108, (2008)

J.N. Heyman, et. al., "Terahertz Photo-Hall Measurements of Carrier Mobility in GaAs and InP, APL 88, 162104, (2006)

J. N. Heyman, N. Coates* , A. Reinhardt *, and G. Strasser, "Diffusion and Drift in Terahertz Emission at GaAs Surfaces".  Applied Physics Letters 83 (2003): 5476.

J. N. Heyman, P. Neocleous*, D. Hebert*, P.A. Crowell, T. Müller, K. Unterrainer, “Terahertz emission from GaAs and InAs in a Magnetic Field” Physical Review B64, (2001) 085202.

J. N. Heyman, R. Kersting, K. Unterrainer. “Time-Domain Measurement of Intersubband Oscillations in a Quantum Well” Applied Physics Letters 72 (Feb. 1998): 644-646.

J. N. Heyman, J. Barnhorst*, K. Unterrainer, J. Williams, K. Campman, P.F.Hopkins, A.C.Gossard. “Intersubband scattering of cold electrons in a coupled quantum well with subband spacing below the optical phonon energy .” Physica E 2 (1998): 195-199.


"Terahertz Charge Oscillations in Semiconductors", Department of Physics, Applied Physics and Astronomy Colloquium, Rensselaer Polytechnic Institute, Troy, NY, April 19th, 2004.